特征Features
響應(yīng)時(shí)間快(Fast response times)。
高光敏性(High photo sensitivity)。
小結(jié)電容(Small junction capacitance)。
替代傳統(tǒng)CDS光敏電阻,不含鎘、鉛等有害物質(zhì),符合歐盟ROHS標(biāo)準(zhǔn)(Instead of the traditional CDS photosensitive resistance, contain cadmium, lead and hazardous substances, ROHS compliant)。用于光控類產(chǎn)品,控制晝夜切換(For optical control products, control day and night switching)。
絕對最大額定值A(chǔ)bsolute Maximum Ratings (Ta =25℃)
參數(shù) Parameter | 符號 Symbol | 最大額定值 Rating | 單位 Units |
工作電壓 Supply input Voltage | VCC | 12 | V |
工作環(huán)境溫度 Operating Temperature | Topr | -25~+85 | ℃ |
儲(chǔ)存環(huán)境溫度 Storage Temperature | Tstg | -40~+100 | ℃ |
焊接溫度 Lead Soldering Temperature | Tsol | 260 | ℃ |
25℃或低于25℃環(huán)境下功耗Power Dissipation at(or below)25℃Free AirTemperature |
PC |
70 |
mW |
光電特性Electro-Optical characteristics(Ta=25℃)
參數(shù) Parameter | 符號Symbol | 條件Condition | 最小值Min. | 中間值Typ. | 最大值Max. | 單位Units |
集電極發(fā)射極擊穿電壓Collector-Emitter Breakdown Voltage | BVCEO | Ic=100μA Ee=0mW/cm2 | 30 | --- | 70 | V |
發(fā)射極集電極擊穿電壓Emitter-Collector Breakdown Voltage | VECO | IE=100μA Ee=0mW/cm2 | 5 | --- | --- | V |
集電極發(fā)射極飽和電壓Collector-Emitter Saturation Voltage | VCE(sta) | Ic=2mA Ee=1mW/cm2 | --- | --- | 0.4 | V |
啟動(dòng)延時(shí)Rise time | Tr | VCE=5V Ic=1mA RL=1000Ω | --- | 15 | --- | μS |
關(guān)閉延時(shí)Fall Time | Tf | --- | 15 | --- | ||
暗電流Collector Dark Current | ICEO | Ev=0mW/cm2 VCE=20V | --- | --- | 100 | nA |
亮電流On StatCollector Current | IC(on) | Ev=10lux 590nmVCE=5v | 7 | --- | 8 | uA |
接收峰值光譜 Wavelength of Peak Sensitivity | λρ | --- | 400 | 850 | 1100 | nm |